MRT series provides optimum magnetic annealing process for a wide variety of magnetic devices such as Magnetoresistive random-access memory (MRAM), HDD heads, magneto-sensors for smart power, smartphone, automobile and other applications. Due to the increasing demand for fast, low power consuming and nonvolatile memory devices, the global market for MRAM will grow in the future. In particular, perpendicular magnetic tunnel junction (P-MTJ) MRAM is highly expected as next generation memory for high performance computing and other emerging applications. The system’s unique thermal processing technology in a uniform magnetic field realizes excellent film thickness distribution and enhanced magneto-characteristics of each device.