Etch Certas™ Series
Continuing to meet market expectations as the cornerstone of isotropic etch
Certas™ is a series of environment-friendly, high-throughput gas chemical etch systems. Designed to deliver optimal solutions for advanced devices, Certas™ offers high etch selectivity, high uniformity, and excellent removal of residue and roughness.
Certas LEAGA™ is an environment-friendly, high-throughput gas chemical etch system designed for 300mm wafers that provides surface etch and cleaning without the use of liquids. Its dry processing features watermark-free, unique selectivity performance over various SiO2 films and precise control of interface cleaning. It offers greater flexibility when combined with TEL’s cleaning system. Certas LEAGA™ supports a number of isotropic process requirements for 3D-structure devices with high utilization capability and low cost operation through its plasma-free solution. Up to six dual-wafer processing chambers can be installed on a single platform to satisfy various process requirements. Easily configurable process units enable device scaling and enhanced productivity. Certas LEAGA™ provides highly precise process solutions such as surface pre-cleaning of Si contact formation, oxide film removal and etch back, selective etch in high-aspect 3D structure, and precise recess process, and has been widely adopted by global semiconductor manufacturers from volume manufacturing to next generation development.
Selectivity by Th-Ox
HCD-SiN selectivityand DCS-SiN selectivity (SiO2/SiN)
Product comparison
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| Wafer size (mm) |
300 | 300 | 300 |
| Availability | New | New | New |
| Number of chambers | 1-6 | 1-12 | 1-6 |
| Application | Dielectric, Chemical Dry Etch |
Dielectric, Conductor, Reactive Ion Etch |
Dielectric, Conductor, Reactive Ion Etch |
| Substrates | Si | Si | Si |
| Safety | S2, CE | S2, CE | S2, CE |
Certas and Certas LEAGA, Episode, Tactras are registered trademarks or trademarks of Tokyo Electron Group in Japan and/or other countries.
