TOKYO ELECTRON LIMITED

Etch Certas™ Series

Continuing to meet market expectations as the cornerstone of isotropic etch

Certas™ is a series of environment-friendly, high-throughput gas chemical etch systems. Designed to deliver optimal solutions for advanced devices, Certas™ offers high etch selectivity, high uniformity, and excellent removal of residue and roughness.

Certas LEAGA™

Certas LEAGA™ is an environment-friendly, high-throughput gas chemical etch system designed for 300mm wafers that provides surface etch and cleaning without the use of liquids. Its dry processing features watermark-free, unique selectivity performance over various SiO2 films and precise control of interface cleaning. It offers greater flexibility when combined with TEL’s cleaning system. Certas LEAGA™ supports a number of isotropic process requirements for 3D-structure devices with high utilization capability and low cost operation through its plasma-free solution. Up to six dual-wafer processing chambers can be installed on a single platform to satisfy various process requirements. Easily configurable process units enable device scaling and enhanced productivity. Certas LEAGA™ provides highly precise process solutions such as surface pre-cleaning of Si contact formation, oxide film removal and etch back, selective etch in high-aspect 3D structure, and precise recess process, and has been widely adopted by global semiconductor manufacturers from volume manufacturing to next generation development.

Selectivity by Th-Ox

Selectivity by Th-Ox

HCD-SiN selectivityand DCS-SiN selectivity (SiO2/SiN)

HCD-SiN selectivityand DCS-SiN selectivity (SiO2/SiN)

Product comparison


 
Certas LEAGA™
Certas LEAGA™
Episode™ UL
Episode™ UL
Tactras™
Tactras™
Wafer size
(mm)
300 300 300
Availability New New New
Number of chambers 1-6 1-12 1-6
Application Dielectric,
Chemical Dry Etch
Dielectric, Conductor,
Reactive Ion Etch
Dielectric, Conductor,
Reactive Ion Etch
Substrates Si Si Si
Safety S2, CE S2, CE S2, CE

Certas and Certas LEAGA, Episode, Tactras are registered trademarks or trademarks of Tokyo Electron Group in Japan and/or other countries.