NT333™ is TEL’s first semi-batch chamber for ALD (Atomic Layer Deposition). It offers thin film thickness control at the atomic level while providing exceptional film quality and high productivity due to employment of the spatial ALD method versus more conventional time divided ALD technology. Multiple substrates can be simultaneously processed within each chamber. The chamber itself is partitioned into complementary sections enabling simultaneous exposure to and adsorption of precursors and other reactants in a continuous mode by substrate rotation. One ALD cycle is performed by one rotation of the wafer stage. No longer is ALD processing limited to ultra-thin films. High productivity ALD is now attainable by high stage rotation speeds along with an optimized gas delivery system made possible by well isolated reaction zones.
