Etch system UNITY™ Series

The long-selling etch system has been receiving a lot of attention from the SiC market

The UNITY™ Me achieves excellent cost performance for plasma etch process within 200mm wafer, which provides exceptional reliability and productivity. Recent years, the system has a great deal and favorable approval through demonstration of high performance Si/SiC trench etch process for leading-edge power devices manufacturing.

UNITY™ Me

UNITY™ Me is a cost effective dry etch system for 100/150/200mm wafer diameter, which has been attracting attention in recent years again as a highly efficient system and is still sold as a new product. There are rich variety of special chamber specifications, such as SCCM™, DRM for SiO2/SiN etch and UD chamber for Si/SiC trench etch. TEL offers a wide range of etch applications to the customer through closely collaboration in process demonstration using internal evaluation tools.

Product comparison

UNITY™ Me OxUNITY™ Me Si &
UNITY™ Me SiC
ChamberSCCM™DRMUD
Wafer size (mm)200100,150,200100,150,200
AvailabilityNew, Certified usedNew, Certified used
Number of chambers1-41-4
ProcessOx, SiN, HM, EB, Contact, Via,
Trench, SAC, Spacer, DD
Trench, EB, TSV
SubstratesSi, glass, SiC, sapphire, LN, LT, AlTicSi, SiC, Glass
SafetyS2, CE, ROWS2, CE, ROW
Additional sizes w/wafer holder (mm)square75, squareN/A