ALD/ALE2025
Event Summary
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Date
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2025.06.22 - 2025.06.25
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Location
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Jeju Island, South Korea
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Target
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Device Engineer Process Engineer
The international conference on Atomic Layer Deposition (ALD) and Atomic Layer Etching (ALE), essential technologies for the scaling of semiconductor devices, will be held from June 22 to 25, 2025, in Jeju Island, South Korea.
TEL will present 10 technical presentations, including collaborative projects with partners, and Robert Clark from TEL, who serves on the ALD Program Committee, will moderate a session. This international conference not only provides an opportunity to learn about cutting-edge technological trends but also offers valuable networking time with industry experts.
We hope you are looking forward to ALD/ALE 2025!
Monday Afternoon, June 23, 2025
ALD Applications
Session AA-MoA
Memory Applications I
Moderators:
Hanmei Choi, Samsung Electronics, Republic of Korea
Robert Clark, TEL Technology Center, America
Monday Evening, June 23, 2025
AF-MoP-41
Modulation of HfxZr1-xO2 Thin Film Characteristics via ALD and ALE
Ming-Kuan Fan (Graduate Student), National Tsing Hua University, Taiwan Instrument Research Institute
Yi-Cheng Chen, National Tsing Hua University
Chien-Wei Chen, Yang-Yu Jhang, Sheng-De Wong, Taiwan Instrument Research Institute
Hong-Luen Lin, Tokyo Electron Taiwan
Ying-Hao Chu, National Tsing Hua University
8:30am, Tuesday, June 24, 2025
AF3-TuM-3
Revealing the Effect of Defect and Hydrogenation on Borazine-based Atomic Layer Deposition using First Principles Calculations
Tsung-Hsuan Yang, Tokyo Electron America
Gyeong Hwang, University of Texas at Austin
Hu Li, Jianping Zhao, Peter Ventzek, Tokyo Electron America
9:15am, Tuesday, June 24, 2025
AF1-TuM-6
Catalytic Role of Silane(SiH4) in Enhancing Titanium Nitride(TiN) Atomic Layer Deposition(ALD)
Hu Li, Tokyo Electron America
Taichi Monden, Masaaki Matsukuma, Tokyo Electron Technology Solutions
Jianping Zhao, Tokyo Electron America
Yoshitada Morikawa, Osaka University, Japan
Peter Ventzek, Tokyo Electron America
11:30am, Tuesday, June 24, 2025
ALE2-TuM-15
Suppressing Surface Roughness in Tungsten Wet Atomic Layer Etching using Halogenation
Tulashi Dahal, Kate Abel, Tokyo Electron America
Karthik Pillai, TEL Technology Center, America
Trace Hurd, Antonio Rotondaro, Tokyo Electron America
4:30pm, Tuesday, June 24, 2025
ALE2-TuA-13
Comparison of Gas-Pulsing Atomic Layer Etching (ALE) Characteristics Between Low-GWP Alternative Gases C₄F₆, C₄H₂F₆ and a Conventional Gas C₄F₈
Shinjae You, Department of Physics, Chungnam National University and Institute of Quantum Systems (IQS), Chungnam National University, Republic of Korea
Dongki Lee (Graduate Student), Inho Seong, Department of Physics, Chungnam National University, Republic of Korea
Young-seok Lee, Tokyo Electron Korea, Republic of Korea
Sijun Kim, Laboratoire de Physique des Plasmas (LPP), CNRS, Sorbonne Université, École Polytechnique, Institut Polytechnique de Paris, Republic of Korea
Chul_Hee Cho, Wonnyoung Jeong, Department of Physics, Chungnam National University, Republic of Korea
Ehsanul Haque Jami, Department of Physics, Chungnam National University, Bangladesh
Min-su Choi, Byeongyeop Choi, Seonghyun Seo, Isak Lee, Woobeen Lee, Won-gyun Park, Jinhyeok Jang, Department of Physics, Chungnam National University, Republic of Korea
4:45pm, Tuesday, June 24, 2025
AS-TuA-14
ALD Outstanding Presentation Award Finalist: High Temperature Area Selective ALD SiN by in-Situ Selective Surface Fluorination
Haonan Liu, Ken Okoshi, Hiroki Murakami, Yamato Tonegawa, Tokyo Electron Technology Solutions
Area Selective ALD
Room Event Hall - Session AS-TuP
Area Selective ALD Poster Session
5:45 – 7:00 pm
AS-TuP-3
Comparative Study of Experimental and DFT Calculations of Trimethylaluminium Adsorption on SiO2, SiN, and Si for Area-Selective Deposition
Genki Hayashi, Ni Zeyuan, Yumiko Kawano, Shinichi Ike, Shuji Azumo, Tokyo Electron Technology Solutions
AS-TuP-4
An Automated Adsorption Simulation Workflow for Efficient High-Throughput Molecule Screening for Area-Selective Deposition
Zeyuan Ni, Michitaka Aita, Tokyo Electron Technology Solutions
Ayuta Suzki, TEL Technology Center, America
Genki Hayashi, Yumiko Kawano, Shinichi Ike, Shuji Azumo, Tokyo Electron Technology Solutions
8:30am, Wednesday, June 25, 2025
ALE1-WeM-3
Cryogenic Atomic Layer Etching of SiO2 by Physisorption of HF/C2H5OH and Ar Plasmas
Shih-Nan Hsiao, Makoto Sekine, Nagoya University, Japan
Yoshihide Kihara, Tokyo Electron Miyagi
Masaru Hori, Nagoya University
2:30pm, Wednesday, June 25, 2025
AF-WeA-5
The Development of Ultralow-Dielectric Constant Boron Nitride Film by Novel Plasma Atomic Layer Deposition
Kazuki Goto, Yoshihiro Kato, Shuichiro Sakai, Hiroki Murakami, Yamato Tonegawa, Tokyo Electron Technology Solutions
