TOKYO ELECTRON LIMITED

ALD/ALE2024

Event Summary

Date

2024.08.04 - 2024.08.07

Location

Helsinki, Finland

Target

Device Engineer Process Engineer

Tokyo Electron (TEL) is proud to be a Platinum Sponsor of ALD/ALE2024, which will be held from August 4-7 in Helsinki, Finland.

This conference will feature presentations on the latest research on the science and technology of atomic layer deposition (ALD) and atomic layer etching (ALE), which are key technologies for scaling of semiconductor devices.

On Sunday August 4th in Hall 3a at 3:30pm Robert Clark (TEL Technology Center, America), a member of the ALD technical committee, will give a tutorial on atomic-scale processing for semiconductor technology.

Then on Monday August 5th in Hall 5a at 11:15am Eric Liu (TEL Technology Center, America) will give the ALE Plenary Lecture covering atomic layer precision processes to enable advanced patterning.

In addition, TEL authors and co-authors will contribute several more speeches and technical presentations listed below.
Please join us!

Sunday Afternoon, August 4
Tutorial and Perspective Session
3:30 p.m.
INVITED: TS-SuA-11
Thin Film Process Technologies for the Atomic Scale Era
Robert Clark, TEL Technology Center, America

Monday Morning, August 5
Plenary Session
11:15 a.m.
INVITED: PS-MoM-11
Atomic Layer Precision Process to Enable Advanced Patterning toward High-NA EUV Era
Eric Liu, TEL Technology Center, America

Tuesday Morning, August 6
ALD Fundamentals Session
11:15 a.m.
AF2-TuM-14
Plasma Enhanced Atomic Layer Deposition of Boron Nitride
Marc Reynaud, University of Texas at Austin, USA
J. Zhao, J. Carroll, G. Blankemeyer, P. Ventzek, Tokyo Electron America, Inc.
J. Warner, J. Ekerdt, University of Texas at Austin, USA

Tuesday Afternoon, August 6, 2024
ALD Fundamentals Session
4:30pm
AF2-TuA-13
Quantum Chemical Investigation on the Reaction Mechanism of Atomic Layer Deposition of ZrO2 from Heteroleptic CpZr(N(CH3)2)3 Precursor and Ozone
Rabi Khanal, R. Joe, A. Dip, Tokyo Electron America, Inc.

Atomic Layer Etching Session
4:45pm
ALE2+AM-TuA-14
Ligand-Assisted Surface Layer Formation in Wet Atomic Layer Etching of Molybdenum
Tulashi Dahal, K. Abel, Tokyo Electron America Inc.
N. Levtchin, TEL Manufacturing and Engineering of America, Inc.
T. Hurd, A. Rotondaro, Tokyo Electron America Inc.

5:00pm
ALE2+AM-TuA-15
Wet Atomic Layer Etching of Ruthenium
Kate Abel, Tokyo Electron America, Inc.