3Q FY2015 Earnings Release Conference Q&A
Memory investment has continued to be active since about the middle of 2014; consequently, investment in DRAM for the October to December quarter was greater than predicted.
We expect orders for SPE to remain at generally the same level as in the October to December quarter of 2014. There will not be major changes in orders by individual application, while the composition ratio of orders for memory will remain high.
The higher gross profit margin is attributable to improvements in both plant operating rates and the marginal profit ratio. The improvement in the operating margin is due to a higher gross profit margin, as well as the fact that SG&A expenses, such as business combination related expenses, were lower than in the July to September quarter.
We expect to see the adoption of 14/16nm FinFET in logic devices, and mass production of next-generation 3D-NAND products in memory. The use of metal materials is also increasing. We will continue focusing on the development of deposition systems and etch systems, with the aim of increasing our future market share in these fields.
We are unable to provide details or answer questions about ongoing discussions with the regulators.
We announced that we will be able to continue discussions with the Ministry of Commerce (MOFCOM) of the People's Republic of China in coordination with the remaining reviews in other jurisdictions.