ALD/ALE 2019
Event Summary
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Date
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2019.07.21 - 2019.07.24
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Location
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United States（Bellevue）
The AVS 19th International Conference on Atomic Layer Deposition (ALD 2019) featuring the 6th International Atomic Layer Etching Workshop (ALE 2019) will be held at Bellevue, USA, during July 21-24, 2019. The conference highlight the science and technology of atomic layer deposition and atomic layer etching. Tokyo Electron(TEL) will report research results by three oral talks and a poster presentation.
1, ALD HfO2 with Anhydrous H2O2 in a 300 mm Cross-flow Reactor – Comparison with H2O and O3 Oxidants
2, Selective Quasi-ALE of SiO2 over Si3N4 via Bottom-up Si3N4 Passivation: A Computational Study
3, ALD and Etch Synergy to Enable the Next Scaling Innovations
4, The Journey of ALD High-k Metal Gate from Research to High Volume Manufacturing
1, Steven Consiglio‚ Robert Clark‚ Cory Wajda‚ and Gert Leusink (TEL Technology Center‚ America‚ LLC)
2, Du Zhang‚ Yu-Hao Tsai‚ Yanxiang Shi‚ and Mingmei Wang (TEL Technology Center‚ America‚ LLC)
3, Angelique Raley*1, K.L. Lee*1, X. Sun*1, Q. Lou*1, Y.T. Lu*1, M. Edley*1, S. Oyola-Reynoso*1, P. Ventzek*1, R. Clark*1, P. Biolsi*1, H. Masanobu*2, and A. Ranjan*3
*1 TEL Technology Center, America, LLC
*2 Tokyo Electron Miyagi Ltd.
*3 Tokyo Electron America, Inc.
4, Dina Triyoso, R. Clark, S. Consiglio, K. Tapily, C. Wajda, and G. Leusink (TEL Technology Center, America, LLC )
