Thermal Processing


Thickness controllability at the monolayer level through sufficient gas adsorption and oxidation
High quality film deposition by taking quality improvement steps into ALD cycles
SiO2 film deposited in low temperature regions (<400C) has comparable HF etch resistance and leakage performance to thermal oxide
Enhanced productivity through high speed ALD cycles to achieve system throughput of over 100 wafers per hour


High Quality ALD SiO2

Semiconductor Production Equipment : Thermal Processing


  • Semiconductor Production Equipment
    • Thermal Processing
    • Coater/Developers
    • Etch system
    • Surface Preparation system
    • Single Wafer Deposition
    • Test system
    • Wafer Bonding/Debonding
    • SiC Epitaxial CVD System
    • Gas Cluster Ion Beam System
    • Advanced Packaging
  • Flat Panel Display Equipment
    • FPD Coater/Developer
    • FPD Etch/Ash system
    • Inkjet printing system for manufacturing OLED panels
  • Field Solutions
  • Chip Making Process