Tokyo Electron to Begin Accepting Orders for Triase+™ EX-II™ TiON, a Single-Wafer Metallization System
Tokyo Electron Limited (TEL) announced today that it would begin accepting orders for the Triase+TM EX-IITM TiON (titanium oxynitride) single-wafer metallization system in August 2016.
The Triase+ EX-II TiON is a high-speed, single-wafer ASFD1 system capable of oxidizing TiN (titanium nitride) films. This new system inherits the optimized reactor chamber and unique gas injection mechanism that characterize the Triase+ EX-II TiN system. Because the TiON film deposited by the Triase+ EX-II TiON has a higher work function2 than that of a conventional TiN film, it effectively reduces leakage current when used to form the electrodes of an MIM capacitor3. Customers already using the TiN system can upgrade to the TiON system by modifying their existing systems, thereby reducing investment costs.
"The Triase+ EX-II TiON is a product with significant cost and performance benefits that can meet the continual demand for miniaturization in semiconductor manufacturing processes," said Shingo Tada, Vice President and General Manager of Thin Film Formation BU at TEL. "We intend to keep expanding the type of films the Triase+ EX-II series can handle, enabling it to cover an even greater variety of metallization applications in the future."
Leveraging its ability to develop innovative technologies, TEL will continue to deliver products that add high value and optimize solutions to the technological problems associated with advanced devices.
1 ASFD: Advanced Sequential Flow Deposition. A low-temperature processing method for forming nanoscale metal films with highly-engineered properties.
2 Work function: The minimum quantity of energy required to remove an electron from the surface of a solid.
3 MIM capacitor: Metal-Insulator-Metal capacitor. It consists of an insulator layer between two metal layers.
Trias, Triase+ and EX-II are trademarks of Tokyo Electron Group in Japan and other countries.