Spin Transfer Technologies and Tokyo Electron Join Forces to Bring MRAM to the Next Level

Oct 16, 2017

FREMONT,Calif.and TOKYO - October 9,2017 - Spin Transfer Technologies, Inc. (STT) and Tokyo Electron (TEL) are pleased to announce that they have today signed an agreement for a collaborative engineering program for next-generation SRAM and DRAM-class ST-MRAM devices. The agreement will further the advance of ST-MRAM, a new class of high-performance, persistent memory devices, to provide previously unachievable levels of speed, density, and endurance. The combination of STT’s ST-MRAM technology and TEL’s advanced PVD MRAM deposition tool will allow the companies to quickly develop processes for the highest density and endurance devices. Both companies are allocating resources to this project, with STT contributing its high-speed, high-endurance perpendicular magnetic tunnel junction (pMTJ) design and device fabrication technology, and TEL utilizing its industry-leading ST-MRAM deposition tool and knowledge of unique formation capabilities of magnetic films. This agreement aligns with each company’s goal of offering compelling solutions for the embedded SRAM, and eventually stand-alone DRAM, markets.

SRAM is pervasive in nearly all mobile, computing and industrial applications. SRAM is a fast and high-endurance memory, but it is costly, drains much power and is volatile. ST-MRAM, being more compact, is less costly, requires little power when storing data and is nonvolatile, retaining data for long periods without power. Further improvements especially in terms of fast switching and endurance are needed, however, to fully match or exceed SRAM performance.

STT and TEL will demonstrate solutions that are far denser than other ST-MRAM solutions while eliminating barriers to replacing SRAM. These sub-30nm pMTJ’s, 40 to 50 percent smaller than other commercial solutions, should be attractive to advanced logic-ICs and a significant step toward making DRAM-class ST-MRAM devices.

“Industries have outgrown the capabilities of SRAM and DRAM leaving the market open for the next generation of technology,“ said Tom Sparkman, CEO of STT. “Having TEL, the world’s leading ST-MRAM deposition equipment supplier, as a partner speeds up the development of STT’s technology for replacing SRAM and DRAM. We believe the adoption of ST-MRAM will materially exceed current expectations, and we are excited to work with TEL to revolutionize the ST-MRAM market by achieving the speed, density and endurance the industry needs.”

“Together with STT’s team of experts, device fabrication know-how and its on-site development fab, we expect to accelerate the development of high-performance, high-density MRAM devices for the SRAM market and ultimately the DRAM replacement market.” said Yoichi Ishikawa, Vice President, PVD Dept. of TEL’s Thin Film Formation Business Unit. “We thank STT for recognizing the performance of and for choosing our advanced MRAM deposition system for this purpose.”

About Spin Transfer Technologies
Spin Transfer Technologies, Inc. (STT) is developing ST-MRAM technologies that uniquely combine patented magnetics technologies, circuits and memory architectures to create the industry’s lowest-cost, highest-performance ST-MRAM memories. STT’s disruptive ST-MRAM solutions are ideal replacements for embedded SRAMs as well as future DRAM devices. The company was established by Allied Minds and New York University. For more information, please visit www.spintransfer.com.

News

  • 2017
  • 2016
  • 2015
  • 2014
  • 2013
  • 2012
  • 2011
  • 2010
  • 2009
  • 2008
  • 2007
  • 2006
  • 2005
  • 2004
  • 2003
  • 2002
  • 2001
  • Shows & Events
  • Request News