Tokyo Electron (TEL) Announces the Trias™ HP W, a Metal CVD System for Advanced Contact Plug and Via Fill Applications

Feb 13, 2009

TOKYO, February 13, 2009 - TEL announced today that the company will release the Trias HP W, TELs latest 300mm metal CVD system, in the spring of 2009.



TELs Single Wafer Deposition BU continues to evolve the companys metal deposition product portfolio with the addition of this new system. The Trias HP W (High Performance W) was developed from TELs industry-proven Trias W system, to deposit tungsten (W) films with improved filling performance for device scaling and higher productivity.



The system achieves these improvements for narrow and deep contact structures through the optimization of process recipes, chamber cleaning sequences, and hardware upgrades, such as an enhanced platform for fast wafer transfer.



Go Okubo, General Manager for TELs Single Wafer Deposition Business Unit, said, The Trias HP W is innovative, balancing productivity improvement demands with device scaling for memory toward the 32nm node and beyond. Coming on the heels of last year's Trias HP Ti introduction, which are now being used for mass production by several major memory companies, the Trias HP W exemplifies TEL's commitment to evolving cost effective manufacturing solutions to meet our customers most advanced process technology needs.

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