The Certas, a fully automated single wafer surface preparation system, provides advanced surface pre-clean and oxide removal capabilities at the 45nm technology node and beyond. The system eliminates wafer and equipment damage by using a dry vapor with a non-plasma source, reducing cost-of-ownership and increasing tool reliability and uptime. The process technology incorporated into the Certas system is characterized by its self limiting oxide etch and reverse etch selectivity when compared with traditional DHF wet etching. This provides a tightly controlled etch rate and provides unique Si dioxide selectivities, thereby enabling new integrated process integration opportunities.

• Pre Cleaning
• Oxide Etching

• Single wafer chemical oxide removal system
• Dry, plasma free dry processing; eliminates damage to substrate and process chamber
• Dry processing eliminates watermarks
• Flexible processing - etch amount and selectivity
• Reverse etch selectivity (compared to dilute HF) and self etch control

• *Certas is a registered trademark or a trademark of Tokyo Electron Limited in Japan and other countries
• *Adopting Telius, a high reliable platform proven in etch systems