"Certas WING" is the 2nd generation plasma-free gas chemical etch system targeted at selective oxide film etching. Productivity of the new tool has been improved with twice the throughput while maintaining the same footprint. The "Certas WING" process capability has been expanded to achieve higher etch volumes and provide flexibility for etching of a wider variety of silicon based films that will be used in future semiconductor device manufacturing.

• Silicon oxide etching and silicon oxide etch back
• Contact pre clean

• Unique oxide selectivity and surface preparation performance using plasma-free gas phase etching
• Process flexibility and unique performance with self limiting etch process
• High throughput and compact wafer processing system
• High uptime and low cost of consumables with reliable platform and plasma-free dry etch process

• *Certas WING is a registered trademark or a trademark of Tokyo Electron Limited in Japan and other countries