Epion's nFusion doping system offers high throughput, ultra-shallow doping of atoms to high concentrations without channeling for 32nm and smaller design rules. Dopant materials are introduced using a gas cluster ion beam (GCIB) source to produce a directed energetic chemical beam. Infusion does not exhibit end-of-range damage (EOR). This capability allows for advanced annealing techniques to be implemented without the associated device leakage problems.

• Source/Drain Extensions
• Dual gate polysilicon
• Channel engineering

• Self amorphizing doping eliminates an extra pre-amorphizing step
• No end-of -range (EOR) damage for reduced device leakage
• Utilizes common source gas: Diborane, Germane, Silane, Arsine, etc.
• Simultaneous doping of species to the same depth (B+Ge)
• Low temperature processing with less than 5 watts power on wafer
• Compact footprint (<7sq meters)
• Superior uptime, with more than 300hours between scheduled maintenance.
• Uniform and repeatable process conditions, with dopant uniformity variations of < 2% across wafer and repeatability variations of < 2% wafer-to-wafer
• Shallow doping at high rates (5 to 35nm deep)
• 60 wph mechanical scanning
• Component modules have been designed for easy access and service.
• Uniform and repeatable process conditions, with dopant uniformity variations of < 2% across wafer and repeatability variations of < 2% wafer to wafer