TOKYO- TEL (Tokyo Electron) today announced the company's latest 300mm metal CVD (chemical vapor deposition) system Trias™ LT Ti/TiN. The new system enables deposition of Ti (Titanium) and TiN (Titanium Nitride) films in low temperature process regimes.

Based on the industry-proven Trias platform, the Trias LT Ti/TiN meets the increasing demands for low temperature processing required in the manufacture of nickel silicide contacts. The system incorporates an enhanced shower head design, which allows wafer temperature control over a wide range of deposition temperatures.

By applying TEL's novel processing technology and improved shower head design to contact processing, the Trias LT achieves improvements in barrier metal step coverage while enabling low contact resistance and reduced junction leakage. In addition, the Trias LT produces excellent film uniformity, improved repeatability and enhanced particle performance.

"As we move toward 45 nm contacts, the unique low temperature processing technology offered by TEL's new metal CVD system will enable customers to extend the range of processing applications for next generation devices and beyond," said Kenji Washino, General Manager for TEL's Single Wafer Deposition Business Unit.