TOKYO- Tokyo Electron Ltd. (TEL) has delivered its newest single wafer CVD deposition tool, Trias PZT (Lead Zirconate Titanate), to leading device manufacturers located in both Japan and North America. The system is designed to provide dielectric films for FeRAM (Ferroelectric Random Access Memory) devices.

TEL Trias PZT system offers excellent thickness uniformity and minimal particulate contamination. Combining multiple precursors with a unique liquid delivery method and shower head design allows the Trias PZT to produce films with stable and uniform composition ratios.

FeRAM is a nonvolatile memory technology that uses ferroelectric material, such as PZT, to maintain a charge so the device can retain data without refreshing. When compared to conventional flash memory and EEPROM, this technique features high-speed data transfer and low power consumption. "Sol-gel" and PVD have been used to form the Ferroelectric film, but the excellent crystallinity and composition control of CVD have made it the method of choice as FeRAM devices continue to shrink. With the Trias PZT, TEL offers the best deposition technology to address this emerging market.