|
|
|
|
Jul 8, 2005 TEL Announces the Release of their Newest Chamber for Advanced Dielectric EtchingTOKYO – July 8, 2005 -- Tokyo Electron (TEL), the leader in Dielectric etch systems, announced today that it will begin accepting orders in late August 2005 for the new SCCM™ chamber , development code JIN, a next generation chamber for BEOL dielectric etch processing. The chamber, available for TEL's 300mm Telius™ platforms, is specifically targeted at processing challenges for 45nm and beyond TEL has been working with key customers in the US and Japan to develop its next generation etch chamber to meet the demands of 45 nm. Process challenges, such as Line Edge Roughness (LER), and Edge Polymer buildup are beginning to become an issue at 65nm, and may possibly be a roadblock for 45nm. Building upon the success of the SCCM chamber, TEL engineers have specifically targeted chamber hardware, RF designs and other enhancements that give the new chamber JIN an unprecedented level of control as well as a substantially widened process window. The new hardware targets the shape of the plasma sheath, the electron energy and other key parameters to improve performance. The JIN is another chamber in a long line of successful Dielectric etch chambers, including TEL's popular DRM chamber. In addition to advanced processing capability and improved etch rates, the JIN chamber offers enhanced particle performance, which decreases COO. Furthermore, TEL has designed the new chamber to be compatible with other productivity initiatives at TEL including its patented non plasma particle cleaning process and enhanced throughput hardware. Leveraging TEL's extensive knowledge of capacitively coupled plasma etch chambers and broad install base, the company has produced a chamber which offers customers extensive flexibility and a large process window.
About TEL |
| Back to top |
