Austin, TX- Tokyo Electron (TEL) introduces IRad-, a 300mm plasma-enhanced batch thermal CVD system for advanced thin film deposition. The IRad system is based on the robust, production-proven design of the TELFORMULATM variable-load-size reactor.

Plasma-enhanced chemical vapor deposition (PECVD) processes are typically performed in single-wafer reactors. IRad challenges conventional wisdom by incorporating a plasma source in the reaction chamber of a multi-wafer thermal CVD system. TEL's proprietary plasma source coupled with the unique design of the TELFORMULA process chamber produces excellent across-wafer and wafer-to-wafer film uniformity over a wide range of process conditions. This radically new concept provides significant productivity and cost-of-ownership advantages over conventional single-wafer PECVD.

IRad's in-situ plasma source allows film-forming chemical reactions to proceed at temperatures that are significantly lower than those required for thermal CVD. This directly addresses the low-temperature processing requirements of advanced logic and memory devices. The plasma also allows film chemical compositions to be varied over a very wide range. The resulting physical and electrical properties of the film can thus be precisely tailored to meet the requirements of 45nm devices and beyond. Furthermore, IRad's plasma capability can be combined with TEL's Molecular Layer Deposition (MLD) technology to produce highly conformal, nanometer-scale films and laminates. This unique process methodology enables development of a new class of materials for the nanotechnology era of device fabrication.

IRad is currently in production for molecular layer deposition of SiN and SiBN films. TEL is also currently working with leading logic and memory manufacturers to develop films targeted at the 45nm node and beyond.